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Etching of
metals which do not have volatile compounds such as Cu, Au cannot be
accomplished in RIE systems. On the other hand, physical etching with
accelerating Ar ions is possible. Typically surface is patterned with
thick resist for masking, and the energetic ion flux during etching
overheats the substrate and the resist. Unless efficient means of
removing the heat is found resist becomes very difficult to remove.
Nano-Master
technology has demonstrated capability of keeping substrate temperature
below 50 °C
while wafer is rotating to achieve the desired uniformity.
Features
• 14.5" SS
Cube ion beam chamber
• 12 cm DC
Ion gun 1000V, 500 mA ,DC motor driven SS shutters
• Ion Beam
neutralizer
• Ar MFC
• Chilled
water cooled 6” substrate platen
• Wafer
rotation 3-10 RPM, Vacuum stepper motor
• Wafer Tilt
with a stepper motor through differentially pumped rotational seal
• Manual or
Auto wafer load/unload
• Typical
Etch Rates: 20nm/min Cu, 50nm/min Si
• +/-5% over
4“area etch uniformity
• 5x 10-6
Torr < 20 minutes <2 x10-7 Torr (2 days) Base Pressure with
500 l/sec turbo
• 8x10-8
Torr Base pressure with 1000 l/sec Turbo pump
• Magnetron
Sputtering of SiN4 to protect etched metal surfaces from
oxidation
•PC
Controlled with LabVIEW Software
•Recipe
Driven, Password Protected
• Fully Safety
Interlocked |
