Nano-Master, Inc.
has developed the first Table Top Plasma Assisted Metal Organic Chemical
Vapor Deposition (PA-MOCVD) system for InGaN and AlGaN deposition
processes. The features include five bubblers with individual cooling
baths, heated gas lines, 950 °C platen, three gas rings, RF plasma
source with Shower Head Gas Distribution and N2 flush at the
end of the process, 5 10-7 Torr base pressure, 250 l/sec
turbo pump with oil-free scroll pump, PC controlled, fully automated and
safety interlocked.
Recently this technology has been
extended to five 4” wafer stand alone batch system which can be
integrated into a cluster configuration to meet high throughput
production needs.
NMC-3000
• Application:
Green LED’s (GaN, InGaN, AlGaN, ...)
• Table Top
System
• Five Bubblers
with Individual Cooling Baths
• Heated Gas
Lines
• 950 °C Platen,
2” Wafer
• Three Gas Rings
• RF Plasma
Source with Shower Head Gas Distribution
• N2
Flush after Process
• 5 10-7
Torr Base Pressure
• 250 l/sec
Turbomolecular Pump with Oil Free Scroll Pump
• PC Controlled
with LabVIEW
• Recipe Driven,
Password Protected
• Fully Safety
Interlocked
NMC-4000
•Stand Alone
System
•14” Stainless
Steel Cube Chamber
•One 6” Wafer
with 8” Platen or five 4” Wafers on 12” platen
• Heated Gas
Lines
• RF Plasma
Source with Auto Tuner
• Shower Head Gas
Distribution
•1100 °C Platen,
Rotating
• N2
Flush
• Manual or
Automatic wafer Loading and Unloading
• Compatible with
Cluster Configuration |
