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Atomic Layer Deposition System
Atomic layer
deposition provides
a unique method for depositing defect free ultrathin films on surfaces.
This technique uses sequential surface reactions to coat substrates with
high conformality and precise thickness control at the atomic scale.
The process consists of sequential introduction of
desired precursor vapors with hydroxyl groups, each of which forms about
one atomic layer per pulse. Key challenges relate to fast removal of gas
in the chamber to enhance throughput as well as activating Nitrogen to
form stoichiometric compounds of nitrides.
Nano-Master, with extensive expertise in plasma
processing and vacuum technology is able to provide unique solutions on
its Plasma Enhanced ALD product line.
NLD-4000
• HfO2,
Al2O3,TiO2, ZnO, ZrO2 and
various other films
• Growth <100
nm/hr
• <1 nm
Growth/Cycle
• < 1% Thickness
Variation
• ~ 100% Step
Coverage Film Conformality
• 13” Anodized Al
• 8” 400
°C
Platen, PID Controlled, Rotation Optional
• Load Lock
Chamber for Auto Load Unload
• Horizontal Gas
Flow Flow
• ~ 5x10-7
Torr Base Pressure with 250 l/sec Corrosive Turbomolecular Pump
• Four 500 cc SS
Electropolished Bubblers
• Auto N2
or Ar Flushing
• Optional Dual
Chamber Showerhead RF Plasma Source 600 W RF Power Supply and Auto Tuner
or 1 KW ICP
• PC Controlled,
Fully Automated and Safety Interlocked |
