Home
Contact
Toggle navigation
Products
All Products
Deposition
E-Beam Evaporation
PECVD
Sputtering
Thermal Evaporation
Etching
RIE
DRIE
Ion Beam Milling
Growth
ALD
PA-MOCVD
MW-PECVD
Cleaning
Wet
Single Wafer
Large Substrate
Pelliclized and Unpelliclized Reticle
Dry
Plasma Ashing
Dual Systems
Dual Chamber Systems
Auto Wafer Transfer Between Two Chambers
Space Simulation
Other
Platens
Plasma Sources
Company
About
Testimonials
Representatives
Brochures
Quotes
Plasma Etching
Products
Etching
RIE, DRIE, and Plasma Etching
Plasma Etching
Plasma Etching Systems
INSERT PLASMA ETCHING TEXT HERE
Features
Options
Applications
Showerhead gas distribution
20°C to 800°C stage heating options
Up to 12 MFC controlled gas lines
SS and AL chamber options
Up to 200mm substrates
<2% uniformity across 200mm wafer
Open load
Fully automatic recipe driven software control
Organo metallic heated gas lines
Stage Pulsed DC bias
Stage LF bias for film stress control
Auto Load/Unload
Bubblers
Gas cabinet
End point detection
ICP source for High Density Plasma
Various dopants (PH3, B2H6)
SiOx, SiNx and SiOxNy deposition
Amorphous Silicon deposition
Diamond-like carbon deposition
Photonics structures
Encapsulation, isolation
CNT’s - Memory devices
Surface Passivation layer - Solar Cell
Graphene - Nano Scale Electronics Applications
RIE Systems and Subsystems