Plasma Etching
Plasma Etching Systems
INSERT PLASMA ETCHING TEXT HERE
- Showerhead gas distribution
- 20°C to 800°C stage heating options
- Up to 12 MFC controlled gas lines
- SS and AL chamber options
- Up to 200mm substrates
- <2% uniformity across 200mm wafer
- Open load
- Fully automatic recipe driven software control
- Organo metallic heated gas lines
- Stage Pulsed DC bias
- Stage LF bias for film stress control
- Auto Load/Unload
- Bubblers
- Gas cabinet
- End point detection
- ICP source for High Density Plasma
- Various dopants (PH3, B2H6)
- SiOx, SiNx and SiOxNy deposition
- Amorphous Silicon deposition
- Diamond-like carbon deposition
- Photonics structures
- Encapsulation, isolation
- CNT’s - Memory devices
- Surface Passivation layer - Solar Cell
- Graphene - Nano Scale Electronics Applications