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NANO-MASTER, Inc. PECVD systems are
capable of depositing high quality SiO2, Si3N4,
or DLC films on up to 8” diameter substrate sizes. To generate plasma,
it uses RF shower head electrode or Hollow Cathode RF plasma source with
Fractal Gas Distribution. The platen can be biased with RF or
Pulsed DC and it is heated resistively or cooled with chilled water
circulation. The chamber is evacuated to low
10-7 torr pressure using 250
l/sec turbomolecular pump backed with 3.5 cfm mechanical pump. Standard
unit comes with one inert gas, three reactive gas lines and four mass
flow controllers. The planar Hollow Cathode Plasma source with its
unique gas distribution system makes it possible to meet wide range of
requirements such as plasma density, uniformity and separate activation
of reactive species to cover the broadest possible deposition
parameters.
Features:
• Stainless Steel or Aluminum chamber
• Vacuum 10-7 torr range base
pressure
• RF Shower Head, HCD, ICP or Microwave
plasma sources
• Up to 8” diameter substrate holder
• RF biased substrate holder
• Water cooled platen
• Heated Platen up to 800 °C
• Heated gas lines up to 130 °C
• Heated liquid delivery system
• Corrosive pump package
• One gas carrier and three reactive gas
input with mass flow controllers
• Up to 8 MFC’s with vented box and gas
manifolds
• Load Lock and Auto Wafer Load Unload
Door
• Pneumatically controlled valves
•PC Controlled with LabVIEW
•Recipe Driven, Password Protected
• Fully Safety Interlocked
Applications:
• Plasma Induced Surface Modifications
• Plasma Cleaning
• Plasma Polymerization
• SiO2, Si3N4, DLC, other Films
• Selective Growth of CNT
Plasma Cleaning and Ashing Systems
Nano-Master Plasma Ashing and Cleaning
Systems are designed to meet wide range of needs from single wafer
resist stripping to surface modification. They are PC controlled systems
with various plasma sources, heated and unheated substrate holders and
unique ability to switch from plasma etch to RIE etch modes.
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