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Models:
NPE-3000 PC controlled table top PECVD system
NPE-4000 PC controlled,
stand-alone PECVD system
Applications
Plasma Induced
Surface Modifications
Plasma Cleaning
(NF3)
Plasma Reactive
Ion Etching
Plasma
Polymerization
Plasma Enhanced
Chemical Vapor Deposition (PECVD)
SiO2, Si3N4, DLC,
and other films
HCD P100 Plasma Source
5" or 8" Multijet
Planar Hollow Cathode source
600 watts water
cooled
Fractal monometer
and carrier gas freed
High density
plasmas 10^13 ions/cc
Excellent
uniformity and low contamination
Description
NPE-4000 PECVD system
is capable of depositing high quality SiO2,
Si3N4, or DLC films on up to 8"
diameter substrate sizes. It is a stand-alone PC
controlled system that uses RF shower-head electrode of
Hollow Cathode RF plasma source with Fractal Gas
Distribution to generate plasma. The platen can be
biased with RF or pulsed DC and it is heated resistively
or cooled with chilled water circulation. The standard unit comes with one carrier gas and
two reactive gas lines and with optional mass flow
meters. The NPE-4000 system is designed for the most
demanding applications in R&D and single wafer
manufacturing. Its unique gas distribution system and
the planar Hollow Cathode Plasma source make it possible
to fulfill a wide range of requirements such as plasma
density, uniformity, and separate activation of reactive
species to cover the broadest possible deposition
parameters. |
